A new extraction method of threshold voltage based on temperature effect of a-Si:H TFT

Volume 9, Issue 1, February 2024     |     PP. 1-7      |     PDF (281 K)    |     Pub. Date: January 9, 2024
DOI: 10.54647/physics140606    43 Downloads     206044 Views  

Author(s)

Lei Qiang, School of Medical Information Engineering, Zunyi Medical University, Zunyi, 563000, China; Institute of Science and Technology, University of Sanya, Sanya, 572022,China

Abstract
Based on the double exponential distributions of trap states in the channel of the hydrogenated amorphous silicon thin film transistor (a-Si:H TFT), a new extraction method of the threshold voltage for a-Si:H TFTs has been developed. By taking advantage of the conductivity, the expression of the drain current corresponding to the threshold voltage is obtained. The inclusion of the temperature effect in our model makes accurate the extraction under different temperatures, and results fit well with the experimental data.

Keywords
amorphous, thin film transistor, threshold voltage, temperature

Cite this paper
Lei Qiang, A new extraction method of threshold voltage based on temperature effect of a-Si:H TFT , SCIREA Journal of Physics. Volume 9, Issue 1, February 2024 | PP. 1-7. 10.54647/physics140606

References

[ 1 ] V. Ligatchev, Physica B-Condensed Matter, 337 (2003) 346-356.
[ 2 ] A. Nathan, G.R. Chaji, S.J. Ashtiani, Journal of Display Technology, 1 (2005) 267-277.
[ 3 ] J.T. Rahn, F. Lemmi, J.P. Lu, P. Mei, R.B. Apte, R.A. Street, R. Lujan, R.L. Weisfield, J.A. Heanue, Ieee Transactions on Nuclear Science, 46 (1999) 457-461.
[ 4 ] D. Flandre, V. Kilchytska, T. Rudenko, Ieee Electron Device Letters, 31 (2010) 930-932.
[ 5 ] S.W. Tsao, T.C. Chang, P.C. Yang, M.C. Wang, S.C. Chen, J. Lu, T.S. Chang, W.C. Kuo, W.C. Wu, Y. Shi, Solid-State Electronics, 54 (2010) 1632-1636.
[ 6 ] W.S. Lee, G.W. Neudeck, J. Choi, S. Luan, IEEE Transactions on Electron Devices, 38 (1991).
[ 7 ] Y. Liu, R.-H. Yao, W.-L. Deng, B. Li, Journal of Display Technology, 4 (2008) 180-187.
[ 8 ] M.L. Zhang, D.A. Drabold, European Physical Journal B, 77 (2010) 7-23.
[ 9 ] K.V. Ramesh, D.L. Sastry, Physica B-Condensed Matter, 387 (2007) 45-51.
[ 10 ] J.J. Hauser, G.A. Pasteur, A. Staudinger, Physical Review B (Condensed Matter), 24 (1981).
[ 11 ] S.C. Deane, R.B. Wehrspohn, M.J. Powell, Physical Review B, 58 (1998) 12625-12628.
[ 12 ] T.A. Abtew, M. Zhang, Y. Pan, D.A. Drabold, Journal of Non-Crystalline Solids, 354 (2008) 2909-2913.
[ 13 ] A.I. Yakimov, N.P. Stepina, A.V. Dvurechenskii, L.A. Scherbakova, Physica B, 205 (1995).
[ 14 ] M. Thamilselvan, K. Premnazeer, D. Mangalaraj, S.K. Narayandass, Physica B-Condensed Matter, 337 (2003) 404-412.
[ 15 ] J. Li, D.A. Drabold, Physical Review B, 68 (2003).
[ 16 ] K. Murayama, Physica Status Solidi C, 8 (2011).
[ 17 ] R. Schwarz, Journal of Non-Crystalline Solids, 227 (1998) 148-152.
[ 18 ] K. Hattori, T. Hirao, Y. Musa, H. Okamoto, Physical Review B (Condensed Matter and Materials Physics), 64 (2001).
[ 19 ] T. Rudenko, V. Kilchytska, M.K.M. Arshad, J.P. Raskin, A. Nazarov, D. Flandre, 2011 12th International Conference on Ultimate Integration on Silicon (ULIS 2011), (2011).
[ 20 ] M.S. Shur, H.C. Slade, T. Ytterdal, L. Wang, Z. Xu, M. Hack, K. Aflatooni, Y. Byun, Y. Chen, M. Froggatt, A. Krishnan, P. Mei, H. Meiling, B.H. Min, A. Nathan, S. Sherman, M. Stewart, S. Theiss, Amorphous and Microcrystalline Silicon Technology - 1997 Symposium, (1997).
[ 21 ] G.E. Possin, Amorphous Silicon Technology - 1991 Symposium, (1991).
[ 22 ] A.K. Kapoor, S.C. Jain, J. Poortmans, V. Kumar, R. Mertens, Journal of Applied Physics, 92 (2002) 3835-3838.
[ 23 ] T.A. Abtew, M. Zhang, D.A. Drabold, Physical Review B, 76 (2007).
[ 24 ] S. Marianer, B.I. Shklovskii, Physical Review B (Condensed Matter), 46 (1992).
[ 25 ] M. Shur, M. Hack, Journal of Applied Physics, 55 (1984).
[ 26 ] M. Shur, M. Hack, J.G. Shaw, Journal of Applied Physics, 66 (1989) 3371-33803380.
[ 27 ] R. Bruggemann, Thin Solid Films, 427 (2003) 355-357.
[ 28 ] M. Hack, R.A. Street, Applied Physics Letters, 53 (1988) 1083-10851085.
[ 29 ] J. Kakalios, R.A. Street, Physical Review B (Condensed Matter), 34 (1986).
[ 30 ] R.A. Street, IEEE Transactions on Electron Devices, 36 (1989).
[ 31 ] A. Kuo, T.K. Won, J. Kanicki, IEEE Transactions on Electron Devices, 55 (2008) 1621-1629.